ST · FETs & Power MOSFETs · MPN STW18N65M5
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF |
| RDS(on) | 198mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.24nF |
15A 4V 110W 198mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS