ST STW18N60M2

ST · FETs & Power MOSFETs · MPN STW18N60M2

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Specifications

Gate Charge(Qg)21.5nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)13A
Output Capacitance(Coss)40pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)1.3pF
RDS(on)255mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)791pF
TypeN-Channel

Technical details

600V 13A 3V 110W 255mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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