ST STW15NM60ND

ST · FETs & Power MOSFETs · MPN STW15NM60ND

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage-
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)299mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.25nF

Technical details

14A 5V 125W 299mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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