ST · FETs & Power MOSFETs · MPN STW11NM80
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| Gate Charge(Qg) | 43.6nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -65℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 350mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.63nF |
800V 11A 4V 150W 350mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS