ST STW11NK90Z

ST · FETs & Power MOSFETs · MPN STW11NK90Z

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Specifications

Gate Charge(Qg)115nC@10V
Drain to Source Voltage900V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)9.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)980mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

N-Channel 900V 9.2A 200W Through Hole TO-247

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