ST · FETs & Power MOSFETs · MPN STW10NK80Z
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| Gate Charge(Qg) | 72nC@640V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| RDS(on) | 780mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.18nF |
800V 9A 4.5V 160W 780mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS