ST STW10NK60Z

ST · FETs & Power MOSFETs · MPN STW10NK60Z

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Specifications

Gate Charge(Qg)70nC
Drain to Source Voltage600V
Output Capacitance(Coss)156pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)750mΩ
Number1 N-channel
Input Capacitance(Ciss)1.37nF
Vgs±30V

Technical details

N-Channel 600V 10A 156W Through Hole TO-247

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