ST STU8NM50N

ST · FETs & Power MOSFETs · MPN STU8NM50N

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)14nC@10V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)790mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)364pF

Technical details

500V 5A 2V 45W 790mΩ@10V 1 N-channel IPAK Single FETs, MOSFETs RoHS

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