ST STU7N65M2

ST · FETs & Power MOSFETs · MPN STU7N65M2

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Specifications

Gate Charge(Qg)9nC@520V
Drain to Source Voltage650V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.8pF
RDS(on)980mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)270pF

Technical details

N-Channel 650V 5A 60W Through Hole IPAK

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