ST STU6N60DM2

ST · FETs & Power MOSFETs · MPN STU6N60DM2

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Specifications

Gate Charge(Qg)6.2nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)1.1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)274pF
TypeN-Channel

Technical details

N-Channel 600V 5A 60W Through Hole TO-251-3(IPAK)

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