ST STU13NM60N

ST · FETs & Power MOSFETs · MPN STU13NM60N

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)27nC@10V
Current - Continuous Drain(Id)11A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation90W
RDS(on)360mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)790pF

Technical details

600V 11A 4V 90W 360mΩ@10V 1 N-channel TO-251(IPAK) Single FETs, MOSFETs RoHS

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