ST STU11N65M2

ST · FETs & Power MOSFETs · MPN STU11N65M2

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Specifications

Gate Charge(Qg)12.5nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)0.9pF
RDS(on)680mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)410pF
TypeN-Channel

Technical details

N-Channel 650V 7A 85W Through Hole IPAK

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