ST STT4P3LLH6

ST · FETs & Power MOSFETs · MPN STT4P3LLH6

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12.6nC@4.5V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)90mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)639pF
TypeP-Channel

Technical details

30V 4A 2.5V 1.6W 90mΩ@4.5V 1 P-Channel P-Channel SOT-23-6 Single FETs, MOSFETs RoHS

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