ST · FETs & Power MOSFETs · MPN STS9P2UH7
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| Gate Charge(Qg) | 22nC@16V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 220pF |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 188pF |
| RDS(on) | 85mΩ@1.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.39nF |
| Type | P-Channel |
20V 9A 1V 2.7W 85mΩ@1.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS