ST STS8DN6LF6AG

ST · FETs & Power MOSFETs · MPN STS8DN6LF6AG

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Specifications

Current - Continuous Drain(Id)8A
RDS(on)26mΩ@4.5V
Pd - Power Dissipation3.2W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)60pF
Number2 N-Channel
Input Capacitance(Ciss)1.34nF
Gate Charge(Qg)27nC@10V
Operating Temperature-
Output Capacitance(Coss)90pF

Technical details

8A 26mΩ@4.5V 3.2W 2.5V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS

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