ST STS8DN3LLH5

ST · FETs & Power MOSFETs · MPN STS8DN3LLH5

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Specifications

Current - Continuous Drain(Id)10A
RDS(on)22mΩ@4.5V
Pd - Power Dissipation2.7W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)21pF
Number2 N-Channel
Input Capacitance(Ciss)724pF
Gate Charge(Qg)5.4nC@15V
Operating Temperature-55℃~+150℃

Technical details

10A 22mΩ@4.5V 2.7W 1V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS

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