ST STS8C5H30L

ST · FETs & Power MOSFETs · MPN STS8C5H30L

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Specifications

Gate Charge(Qg)60nC@5V
Drain to Source Voltage30V
Output Capacitance(Coss)490pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)55mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.35nF
TypeN-Channel + P-Channel

Technical details

30V 8A 2.5V 2W 55mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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