ST STS4DNF60L

ST · FETs & Power MOSFETs · MPN STS4DNF60L

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Specifications

Current - Continuous Drain(Id)4A
Pd - Power Dissipation2W
RDS(on)65mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)40pF
Number2 N-Channel
Input Capacitance(Ciss)1.03nF
Gate Charge(Qg)15nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)140pF

Technical details

4A 2W 65mΩ@4.5V 2.5V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS

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