ST STS1NK60Z

ST · FETs & Power MOSFETs · MPN STS1NK60Z

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Specifications

Configuration-
Drain to Source Voltage600V
Gate Charge(Qg)6.9nC@10V
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)2.8pF
RDS(on)15Ω@10V
Number1 N-channel
Input Capacitance(Ciss)94pF

Technical details

600V 250mA 4.5V 2W 15Ω@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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