ST STS1DNC45

ST · FETs & Power MOSFETs · MPN STS1DNC45

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Specifications

Current - Continuous Drain(Id)400mA
RDS(on)4.1Ω@10V
Pd - Power Dissipation1.6W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage450V
Reverse Transfer Capacitance (Crss@Vds)4.7pF
Number2 N-Channel
Input Capacitance(Ciss)160pF
Gate Charge(Qg)-
Operating Temperature-65℃~+150℃

Technical details

N-Channel Array 450V 0.4A 1.6W Surface Mount SO-8

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