ST STS10P4LLF6

ST · FETs & Power MOSFETs · MPN STS10P4LLF6

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Specifications

Gate Charge(Qg)34nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2.7W
Reverse Transfer Capacitance (Crss@Vds)238.5pF
RDS(on)15mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.525nF

Technical details

P-Channel 40V 10A 2.7W Surface Mount SO-8

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