ST STS10P3LLH6

ST · FETs & Power MOSFETs · MPN STS10P3LLH6

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)33nC@4.5V
Current - Continuous Drain(Id)12.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.7W
Reverse Transfer Capacitance (Crss@Vds)287pF
RDS(on)14mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.35nF

Technical details

30V 12.5A 1V 2.7W 14mΩ@4.5V 1 P-Channel SO-8 Single FETs, MOSFETs RoHS

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