ST STS10DN3LH5

ST · FETs & Power MOSFETs · MPN STS10DN3LH5

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Specifications

Current - Continuous Drain(Id)10A
Pd - Power Dissipation2.5W
RDS(on)21mΩ@10V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)19pF
Number2 N-Channel
Input Capacitance(Ciss)475pF
Gate Charge(Qg)4.6nC@5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)97pF

Technical details

N-Channel Array 30V 10A 2.5W Surface Mount SO-8

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