ST STQ2LN60K3-AP

ST · FETs & Power MOSFETs · MPN STQ2LN60K3-AP

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)12nC@10V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)600mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)3.5pF
RDS(on)4.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)235pF
TypeN-Channel

Technical details

600V 600mA 4.5V 2.5W 4.5Ω@10V 1 N-channel N-Channel TO-92-3 Single FETs, MOSFETs RoHS

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