ST STQ2HNK60ZR-AP

ST · FETs & Power MOSFETs · MPN STQ2HNK60ZR-AP

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Specifications

Gate Charge(Qg)15nC@480V
Drain to Source Voltage600V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)4.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)280pF
TypeN-Channel

Technical details

N-Channel 600V 2A 45W Through Hole TO-92

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