ST STQ1NK80ZR-AP

ST · FETs & Power MOSFETs · MPN STQ1NK80ZR-AP

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Specifications

Gate Charge(Qg)7.7nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)6.7pF
RDS(on)16Ω@10V
Number1 N-channel
Input Capacitance(Ciss)160pF

Technical details

800V 300mA 3V 3W 16Ω@10V 1 N-channel TO-92-3 Single FETs, MOSFETs RoHS

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