ST · FETs & Power MOSFETs · MPN STQ1NK80ZR-AP
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| Gate Charge(Qg) | 7.7nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.7pF |
| RDS(on) | 16Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 160pF |
800V 300mA 3V 3W 16Ω@10V 1 N-channel TO-92-3 Single FETs, MOSFETs RoHS