ST · FETs & Power MOSFETs · MPN STQ1NK60ZR-AP
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| Gate Charge(Qg) | 6.9nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 17.6pF |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF |
| RDS(on) | 15Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 94pF |
| Type | N-Channel |
N-Channel 600V 0.3A 3W Through Hole TO-92