ST STQ1NC45R-AP

ST · FETs & Power MOSFETs · MPN STQ1NC45R-AP

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Specifications

Drain to Source Voltage450V
Gate Charge(Qg)10nC@10V
Current - Continuous Drain(Id)500mA
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)4.7pF
RDS(on)4.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)160pF
TypeN-Channel

Technical details

N-Channel 450V 0.5A 3.1W Through Hole TO-92

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