ST STP9NM40N

ST · FETs & Power MOSFETs · MPN STP9NM40N

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)14nC@10V
Current - Continuous Drain(Id)5.6A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
RDS(on)790mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)365pF

Technical details

400V 5.6A 4V 60W 790mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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