ST STP9NK60Z

ST · FETs & Power MOSFETs · MPN STP9NK60Z

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)53nC@10V
Output Capacitance(Coss)135pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.11nF
TypeN-Channel

Technical details

600V 7A 4.5V 30W 950mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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