ST STP9N60M2

ST · FETs & Power MOSFETs · MPN STP9N60M2

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)10nC@10V
Output Capacitance(Coss)18pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)680fF
RDS(on)780mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)320pF
TypeN-Channel

Technical details

N-Channel 600V 5.5A 60W Through Hole TO-220

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