ST STP8NK100Z

ST · FETs & Power MOSFETs · MPN STP8NK100Z

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Specifications

Gate Charge(Qg)102nC@800V
Drain to Source Voltage1kV
Output Capacitance(Coss)174pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)1.85Ω@10V
Number1 N-channel
Input Capacitance(Ciss)2.18nF
TypeN-Channel

Technical details

N-Channel 1kV 6.5A 160W Through Hole TO-220

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