ST STP80NF55-06

ST · FETs & Power MOSFETs · MPN STP80NF55-06

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Specifications

Gate Charge(Qg)189nC@10V
Drain to Source Voltage55V
Output Capacitance(Coss)1.02nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)350pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.4nF
TypeN-Channel

Technical details

N-Channel 55V 80A 300W Through Hole TO-220

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