ST STP80N6F6

ST · FETs & Power MOSFETs · MPN STP80N6F6

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Specifications

Gate Charge(Qg)147nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)400pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.325nF
TypeN-Channel

Technical details

N-Channel 60V 80A 120W Through Hole TO-220

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