ST STP80N450K6

ST · FETs & Power MOSFETs · MPN STP80N450K6

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Specifications

Gate Charge(Qg)17.3nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)10A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation100W
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)700pF

Technical details

N-Channel 800V 10A 100W Through Hole TO-220

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