ST STP80N10F7

ST · FETs & Power MOSFETs · MPN STP80N10F7

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Specifications

Gate Charge(Qg)45nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)700pF
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation110W
RDS(on)10mΩ
Reverse Transfer Capacitance (Crss@Vds)45pF
Input Capacitance(Ciss)3.1nF
TypeN-Channel

Technical details

100V 80A 4.5V 110W 10mΩ N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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