ST STP7N60M2

ST · FETs & Power MOSFETs · MPN STP7N60M2

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)8.8nC@10V
Output Capacitance(Coss)15.7pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)680fF
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)271pF
TypeN-Channel

Technical details

600V 5A 4V 60W 950mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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