ST STP6N80K5

ST · FETs & Power MOSFETs · MPN STP6N80K5

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)700fF
RDS(on)1.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

800V 4.5A 5V 85W 1.6Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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