ST STP6N62K3

ST · FETs & Power MOSFETs · MPN STP6N62K3

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage620V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)875pF
TypeN-Channel

Technical details

620V 5.5A 4.5V 90W 1.2Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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