ST STP65NF06

ST · FETs & Power MOSFETs · MPN STP65NF06

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Specifications

Gate Charge(Qg)75nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)135pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.7nF
TypeN-Channel

Technical details

60V 60A 4V 110W 14mΩ@10V 1 N-channel N-Channel TO-220AB-3 Single FETs, MOSFETs RoHS

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