ST · FETs & Power MOSFETs · MPN STP65N045M9
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 54A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 245W |
| Reverse Transfer Capacitance (Crss@Vds) | 23.5pF |
| RDS(on) | 39mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.61nF |
N-Channel 650V 54A 245W Through Hole TO-220