ST · FETs & Power MOSFETs · MPN STP60N043DM9
No reviews yet — be the first to review ST STP60N043DM9.
| Gate Charge(Qg) | 78.6nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 245W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 38mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.675nF |
N-Channel 600V 55A 245W Through Hole TO-220