ST STP5N80K5

ST · FETs & Power MOSFETs · MPN STP5N80K5

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Specifications

Gate Charge(Qg)5nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.3pF
RDS(on)1.75Ω@10V
Number1 N-channel
Input Capacitance(Ciss)177pF
TypeN-Channel

Technical details

N-Channel 800V 4A 60W Through Hole TO-220

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