ST STP55NF06

ST · FETs & Power MOSFETs · MPN STP55NF06

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Specifications

Configuration-
Gate Charge(Qg)60nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)50A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.53nF

Technical details

N-Channel 60V 50A 110W Through Hole TO-220

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