ST STP4NK80Z

ST · FETs & Power MOSFETs · MPN STP4NK80Z

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Specifications

Gate Charge(Qg)22.5nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation80W
RDS(on)3.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)575pF
TypeN-Channel

Technical details

N-Channel 800V 3A 80W Through Hole TO-220

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