ST STP4NK60Z

ST · FETs & Power MOSFETs · MPN STP4NK60Z

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)67pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)510pF
TypeN-Channel

Technical details

N-Channel 600V 4A 70W Through Hole TO-220

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