ST STP4NK50ZD

ST · FETs & Power MOSFETs · MPN STP4NK50ZD

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)49pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)2.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)310pF
TypeN-Channel

Technical details

500V 3A 4.5V 45W 2.7Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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