ST STP4N90K5

ST · FETs & Power MOSFETs · MPN STP4N90K5

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Specifications

Gate Charge(Qg)5.3nC@720V
Drain to Source Voltage900V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)1.9Ω@10V
Number1 N-channel
Input Capacitance(Ciss)173pF

Technical details

900V 3A 3V 60W 1.9Ω@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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