ST STP4N52K3

ST · FETs & Power MOSFETs · MPN STP4N52K3

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Specifications

Gate Charge(Qg)11nC@10V
Drain to Source Voltage525V
Output Capacitance(Coss)28pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)2.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)334pF
TypeN-Channel

Technical details

525V 2.5A 4.5V 45W 2.6Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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