ST STP45N65M5

ST · FETs & Power MOSFETs · MPN STP45N65M5

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Specifications

Gate Charge(Qg)82nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation40W
RDS(on)78mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)7pF
Number1 N-channel
Input Capacitance(Ciss)3.47nF

Technical details

650V 35A 40W Through Hole TO-220

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